Kind of production:		PLATES OF MONOCRYSTAL SILICON
	Unit	Value
Electrophysical parameters:
Method of cultivation on		Ch
Dopand		Boron		Boron		Boron
Conductivity		P		P		P
Resistivity	ohm╥cm	0,5-3		0,5-3		0,5-3
Minority carrier lifetime	msec	> 10		5-10		2-5
Dislocation	cm-2	<10		<10		<10
Oxygen	at/cm3	<1*1018		<1*1018		<1*1018
Carbon	at/cm3	0,1-5*1017		0,1-5*1017		0,1-5*1017
Edge orientaion		(010), (001)		(010), (001)		(010), (001)
Wafer suface orientation		(100) ╠3o		(100) ╠3o		(100) ╠3o
Geometrical parameters:
Thickness	μm	200 ╠20		200 ╠20		200 ╠20
Diameter	mm	150 ╠0,5		150 ╠0,5		150 ╠0,5
Dimension	mm	125,0 x 125,0 ╠0,5		125,0 x 125,0 ╠0,5		125,0 x 125,0 ╠0,5
Symmetry W,X,Y,Z	mm	20,3 - 21,9		20,3 - 21,9		20,3 - 21,9
Squareness and parallelism	mm	< 0,5		< 0,5		< 0,5
Total thickness variation (TTV)	μm	< 30		< 30		< 30
Bow	μm	< 50		< 50		< 50
Sinuosity	μm	< 5		< 5		< 5
Quality of edge		Only 2 chips per wafer of dimension <1 mm long by 0,3 mm deep are allowed. No cracks in wafer allowed.
Variants of execution
Type 1 - the Round facet	pdf	(40Kb)		(40Kb)		(40Kb)

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